Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements

摘要

The effects of nitridation on the density of traps at SiO$_2$/SiC interfacesnear the conduction band edge were qualitatively examined by a simple, newlydeveloped characterization method that utilizes Hall effect measurements andsplit capacitance-voltage measurements. The results showed a significantreduction in the density of interface traps near the conduction band edge bynitridation, as well as the high density of interface traps that was noteliminated by nitridation.